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Volume 10,Issue 7

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4 March 2026
Near-Room-Temperature Performance Characterization of InAsSb XBn Devices
Dongqiong Chen ,  Hairong Wang ,  Rujie Li ,  Gongrong Deng
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1 Yunnan Open University, Kunming, Yunnan 650504, China,
2 Kunming Institute of Physics, Kunming, Yunnan 650225, China,
JERA 2026 , 10(2), 15–20; https://doi.org/10.26689/jera.v10i2.13678
© 2026 by the Authors. Licensee Whioce Publishing, Singapore. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution 4.0 International License ( https://creativecommons.org/licenses/by/4.0/ )
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Abstract

This research aims to enhance the operating temperature of mid-infrared InAsSb XBn detectors (~4.5 μm cutoff) through specific device architecture. Measurements performed under front-side illumination without an antireflection coating showed that at 290 K, the quantum efficiency was 34% for nBn devices compared to 45% for pBn devices. The nBn and pBn devices displayed distinct performance metrics at 290 K under a 500-mV reverse bias. The nBn devices recorded a dark current density of 0.348 A/cm2 and a peak specific detectivity of 8.24×108 cm‧Hz1/2/W, whereas the pBn devices demonstrated improved characteristics with values of 0.536 A/cm2 and 5.92×109 cm‧Hz1/2/W, respectively. The results indicate that these XBn structured barrier photodetectors exhibit excellent performance and demonstrate significant potential for near-room temperature applications.

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