Zinc oxide (ZnO), as a broadband gap semiconductor material, exhibits unique physical and chemical properties that make it highly suitable for optoelectronics, piezoelectric devices, and gas-sensitive sensors, showing significant potential for various applications. This paper focuses on the regulation and application of ZnO-based p-n junctions and piezoelectric devices. It discusses in detail the preparation of ZnO materials, the construction of p-n junctions, the optimization of piezoelectric device performance, and its application in various fields. By employing different preparation methods and strategies, high-quality ZnO thin films can be grown, and effective control of p-type conductivity achieved. This study provides both a theoretical foundation and technical support for controlling the performance of ZnO-based piezoelectric devices, as well as paving new pathways for the broader application of ZnO materials.