Power integrated isolation structures play a crucial role in the field of power electronics, especially in silicon carbide (SiC) devices, where challenges such as high leakage current and insufficient voltage endurance are prevalent. This paper introduces a novel isolation technology based on vanadium ion implantation, achieving high-performance SiC monolithic integration through deep energy level trapping engineering and three-dimensional composite isolation design. The core technologies include: semi-insulating layer + dielectric trench co-isolation, high-precision process control, high-temperature compatibility optimization, ultra-high breakdown field strength, support for 10kV class IGBT/MOSFET integration, and a 30–50% increase in chip area utilization, combining high performance with low-cost advantages.